A new graphical user
interface program called SimuCenterJS has been released. Based on
replaces the existing SimuPics3d, SimuApsys and SimuCSuprem programs
and enhances Crosslight’s capabilities to support other OS platforms.
It also includes a much better Design Of Experiment platform which
allows parameter optimization across multiple simulators, adding new
DOE nodes and collecting/plotting in a DOE tree.
The functionality of LASTIP
for Fabry-Perot lasers has been merged into a new basic edition of
enhanced so that a MxN resistor network can be inserted into the
semiconductor simulation using an array of electrodes.
Improvement of band
Improvement of 8×8 k.p
model, especially for typeII IR PD application.
suitable for microcavity laser diode; already demonstrated for VCSEL
with surface-relief effects.
New feature to automate
the set up of the intraband quantum tunneling model. The location of
tunneling regions and tunneling directions can now be totally
Implementation of a
localized tunneling model (sometime referred to as unified Schottky
tunneling model) using p-n carrier generation to mimic intraband tunneling.
NEGF based quantum
mechanical transport has been enhanced to transport of holes (useful
Multicavity VCSEL model
improved to better handle surface relief effects.
LED device model (RCLED,
LED_control and LED_simple, racetracing) with improved photorecycling
and photon absorption.
Thomson heat more
accurately defined in self-heating thermal model.
AC analysis upgraded for
better modeling of traps and metal/semiconductor interfaces.
assisted tunneling model implemented which likely to explain the
thermal efficiency droop (temperature dependent) for LED.
LO phone scattering times
computed for quantum cascade lasers and QWIP; these were previously
empirical fitting parameters.
Added ability to model an
individual quantum dot with direct electrical/optical pumping.
Previously quantum dot states were imported into a larger-scale
(wetting layer) APSYS/PICS3D model where the electrical injection was
Improved interface with
CSUPREM so that any impurity implanted or deposited in CSUPREM can be
treated as traps in APSYS/PICS3D.
Coupled mode model
interfaced with BPM propagation to that BPM mode shape is expressed as
sum of lateral modes. This is useful for tapered laser diodes such as
hybrid silicon lasers.